Basic knowledge of electronic components-semiconductor devices

1. Chinese semiconductor device model naming method The semiconductor device model consists of five parts (the model naming of field-effect devices, semiconductor special devices, composite tubes, PIN tubes, and laser devices only have the third, fourth, and fifth parts). The meanings of the five parts are as follows: Part 1: Use numbers to indicate the number of effective electrodes of a semiconductor device. 2-Diode, 3-Triode Part 2: Use Chinese Pinyin letters to indicate the material and polarity of semiconductor devices. When indicating a diode: A-N type germanium material, B-P type germanium material, C-N type silicon material, D-P type silicon material. When representing a triode: A-PNP type germanium material, B-NPN type germanium material, C-PNP type silicon material, D-NPN type silicon material. The third part: use Chinese Pinyin letters to indicate the internal type of semiconductor devices. P-common tube, V-microwave tube, W-stabilizer tube, C-parameter tube, Z-rectifier tube, L-rectifier stack, S-tunnel tube, N-damper tube, U-photoelectric device, K-switch tube , X-low-frequency low-power tube (F<3MHz, Pc<1W), G-high-frequency low-power tube (f>3MHz, Pc<1W), D-low-frequency high-power tube (f<3MHz, Pc>1W), A-high frequency high power tube (f>3MHz, Pc>1W), T-semiconductor thyristor (controllable rectifier), Y-body effect device, B-avalanche tube, J-step recovery tube, CS-field effect tube , BT-semiconductor special device, FH-composite tube, PIN-PIN tube, JG-laser device. Part 4: Use numbers to indicate serial numbers. Part V: Use Chinese pinyin letters to indicate specification numbers. For example: 3DG18 means NPN silicon high-frequency transistors. 2. Japanese semiconductor discrete device model naming method. Japanese semiconductor discrete devices are from five to seven. Partial composition. Usually only the first five parts are used, and the symbol meaning of each part is as follows: Part 1: Use numbers to indicate the number or type of effective electrodes of the device. 0-photoelectric (ie photosensitive) diode triode and the combination of the above devices, 1-diode, 2 triode or other devices with two pn junctions, 3- other devices with four effective electrodes or three pn junctions, ┄┄and so on. The second part: Japan Electronics Industry Association JEIA registered mark. S- represents a semiconductor discrete device registered with the Japan Electronics Industry Association JEIA. Part 3: Use letters to indicate the polarity and type of materials used in the device. A-PNP type high frequency tube, B-PNP type low frequency tube, C-NPN type high frequency tube, D-NPN type low frequency tube, FP control pole SCR, GN control pole SCR, HN base single junction transistor , JP channel field effect tube, KN channel field effect tube, M-triac. Part 4: Use numbers to indicate the serial number registered in the Japan Electronics Industry Association JEIA. Two or more integers-starting from "11", it represents the serial number registered in the Japan Electronics Industry Association JEIA; devices with the same performance from different companies can use the same serial number; the higher the number, the more recent products. Part Five: Use letters to indicate the improved product logo of the same model. A, B, C, D, E, F indicate that this device is an improved product of the original model product. 3. The naming method of the US semiconductor discrete device model The naming method of the US transistor or other semiconductor devices is rather confusing. The naming method for discrete semiconductor devices of the American Electronics Industry Association is as follows: Part 1: Use symbols to indicate the type of device use. JAN-military grade, JANTX-special military grade, JANTXV-super special military grade, JANS-space grade, (none)-non-military supplies. The second part: Use numbers to indicate the number of pn junctions. 1-diode, 2=transistor, 3-three pn junction devices, n-n pn junction devices. The third part: the electronic industry association (EIA) registered mark of the United States. N-The device has been registered in the Electronic Industries Association (EIA) of the United States. The fourth part: the serial number of the American Electronics Industry Association registration. Multi-digit number-the serial number of the device registered in the American Electronics Industry Association. Part 5: Use letters to indicate device classification. A, B, C, D, ┄┄-different grades of the same model device. For example: JAN2N3251A means PNP silicon high frequency low power switching transistor, JAN-military grade, 2-transistor, N-EIA registration mark, 3251-EIA registration sequence number, A-2N3251A file. Fourth, the International Electronic Federation semiconductor device model naming method Germany, France, Italy, the Netherlands, Belgium and other European countries and Eastern European countries such as Hungary, Romania, Yugoslavia, Poland, etc., mostly adopt the International Electronics Federation semiconductor discrete device model naming method. This naming method consists of four basic parts. The symbols and meanings of each part are as follows: Part 1: Use letters to indicate the materials used in the device. A-The forbidden band width of the material used in the device Eg=0.6~1.0eV, such as germanium, B-The Eg of the material used in the device=1.0~1.3eV, such as silicon, C-The Eg of the material used in the device>1.3eV, such as gallium arsenide, D- The Eg of the materials used in the device is less than 0.6 eV, such as indium antimonide, composite materials used in E-devices, and materials used in photovoltaic cells. Part 2: Letters are used to indicate the type and main characteristics of the device. A-detection switch mixing diode, B-varicap diode, C-low frequency low power transistor, D-low frequency high power transistor, E-tunnel diode, F-high frequency low power transistor, G-composite device and other devices, H -Magneto-sensitive diode, K-Hall element in open magnetic circuit, L-High-frequency high-power triode, M-Hall element in closed magnetic circuit, P-photosensitive device, Q-light emitting device, R-low power thyristor , S-low-power switching tube, T-high-power thyristor, U-high-power switching tube, X-multiplier diode, Y-rectifier diode, Z-zener diode. The third part: use numbers or letters plus numbers to indicate the registration number. Three digits-representing the registration serial number of general-purpose semiconductor devices, and a letter plus two digits-representing the registration serial number of special semiconductor devices. Part 4: Use letters to classify devices of the same type. A, B, C, D, E┄┄-a mark indicating that devices of the same model are classified according to a certain parameter.

In addition to the four basic parts, suffixes are sometimes added to distinguish characteristics or further classification. The common suffixes are as follows: 1. The suffix of the Zener diode model. The first part of the suffix is a letter, indicating the allowable error range of the stable voltage value. The letters A, B, C, D, and E respectively indicate that the allowable error is ±1%, ±2%, ±5%, ±10%, ± 15%; The second part of the suffix is a number, which represents the integer value of the nominal stable voltage; the third part of the suffix is the letter V, which represents the decimal point, and the number after the letter V is the decimal value of the nominal stable voltage of the Zener tube. 2. The suffix of the rectifier diode: the suffix of the rectifier diode is a number, which indicates the maximum reverse peak withstand voltage of the device, and the unit is volts. 3. Thyristor model suffix: The suffix of the thyristor model is also a number, usually the smaller value of the maximum reverse peak withstand voltage and the maximum reverse shut-off voltage. For example: BDX51-means NPN silicon low-frequency high-power transistors, AF239S-means PNP germanium high-frequency low-power transistors.